Multi-layer thin-film, flexible silicon alloy photovoltaic cell

Details Multi-layer thin-film, flexible silicon alloy photovoltaic cell Multi-layer thin-film, flexible silicon alloy photovoltaic cell

H - Electricity

01

L

345/18

H01L 25/04 (2006.01)

Patent

CA 1210843

MULTI-LAYER THIN FILM, FLEXIBLE SILICON ALLOY PHOTOVOLTAIC CELL ABSTRACT The flexible photovoltaic cell includes thin front and rear junction regions electrically in series each formed of ceramic metallic glass semi-conductor alloys of silicon of approximately zero thermal expansion/ contraction coefficient laminated with an interveninq semi-conducting layer less than 60 Angstroms thick or an insulating layer less than 20 Angstroms thick. The respective spectral sensitivities of front and rear junction regions are tailored to different frequency ranges. In front are six layers described in sequence rear to front. The lowermost (sixth) is a green/blue semi-insulating cobalt and tin passivating and filter layer less than 10 Angstroms thick. The fifth is a semi-conductive, degradation-protective "window" and one-way mirror for returning back-reflected light. The fourth is an insulating tunneling layer less than 15 Angstroms thick for coupling a front collection grid to the "window". Covering the fourth is a triple-layer, anti-reflection coating (ARC) whose middle layer bonds the outer ARC layers and secondarily protects the cell from atmospheric degradation. An internally reflective rear ARC layer cooperates with the "window" for return- ing back reflected light. The frontmost ARC layer is mainly comprised of Al2O3/SiO2 in the range of 200 to 650 Angstroms thickness. The cell backside is shown having undulations for randomizing reflected light rays. The six front layers effectively adapt the cell for receptivity to solar radiation from about 4,000 to about 12,000 Angstroms, excluding radiation outside thereof, thus accepting 68 percent of solar energy vertically reaching the earth's surface.

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