Multi-state magnetic bubble domain cell for random access...

Details Multi-state magnetic bubble domain cell for random access... Multi-state magnetic bubble domain cell for random access...

G - Physics

11

C

352/37.2

G11C 11/14 (2006.01) G11C 11/56 (2006.01)

Patent

CA 1063240

T I T L E MULTI-STATE MAGNETIC BUBBLE DOMAIN CELL FOR RANDOM ACCESS MEMORIES INVENTORS Witold Kinsner Edward Della Torre ABSTRACT OF DISCLOSURE A multi-state memory cell which uses magnetic bubble domains in uniaxial material is described. The cell includes a channel in which a number of stable bubble positions separated by barriers is formed and on which select conductors are positioned to switch a bubble from one stable position to another on a threshold basis by means of coincident currents. A cell in accordance with this invention may take the form of a four-state-two conductor cell, two-bistable-state two- conductor cell, multi-state six conductor cell and six-state three-conductor cell and include destructive or non-destructive readout.

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