C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
C04B 35/56 (2006.01) C09K 3/14 (2006.01) C22C 1/05 (2006.01) C22C 29/08 (2006.01)
Patent
CA 2215646
Grain growth inhibitors including vanadium carbide, chromium carbide, tantalum carbide, and niobium carbide are incorporated into a cobalt/tungsten carbide matrix during the formation of the cobalt/tungsten carbide matrix. A precursor powder is formed by combining in solution a cobalt composition, a tungsten composition and a grain growth inhibiting metal composition, which is then spray dried. The precursor compound is then carburized in carbon monoxide and carbon dioxide to form cobalt/tungsten carbide matrix. This is then further carburized in a hydrocarbon hydrogen gas at an elevated temperature to cause the grain growth inhibiting metal present to form the carbide. The second carburizing step is conducted with a carburizing gas having a carbon activity greater than about 2 for a relatively short period of time at 900° C to 10000° C.
Macrae & Co.
N.v. Umicore S.a.
Nanodyne Incorporated
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