H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/322 (2006.01) H01L 21/223 (2006.01) H01L 31/042 (2006.01) H01L 31/18 (2006.01)
Patent
CA 2670527
The present invention relates to multicrystalline p-type silicon wafers with high lifetime. The silicon wafers contain 0.2-2.8 ppma boron and 0.06-2.8 ppma phosphorous and/or arsenic and have been subjected to phosphorous diffusion and phosphorous gettering at a temperature of above 925°C. The invention further relates to a method for production of such multicrystalline silicon wafers and to solar cells comprising such silicon wafers.
La présente invention concerne des plaquettes de silicium polycristallin de type p avec une grande durée de vie. Les plaquettes de silicium contiennent de 0,2 à 2,8 ppma de bore et de 0,06 et 2,8 ppma de phosphore et/ou d'arsenic et ont été soumises à une diffusion de phosphore et à une absorption de phosphore à une température supérieure à 925°C. L'invention concerne en outre un procédé de production de telles plaquettes de silicium polycristallin et des cellules solaires comprenant de telles plaquettes de silicium.
Enebakk Erik
Peter Kristian
Raabe Bernd
Tronstad Ragnar
Elkem Solar As
Valadares Law Professional Corporation
LandOfFree
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