Multidrain metal-oxide-semiconductor field-effect device

Details Multidrain metal-oxide-semiconductor field-effect device Multidrain metal-oxide-semiconductor field-effect device

H - Electricity

03

K

328/127, 356/30

H03K 19/094 (2006.01) H01L 27/02 (2006.01) H01L 27/088 (2006.01) H01L 29/08 (2006.01) H03K 19/0944 (2006.01)

Patent

CA 1111514

ABSTRACT OF THE DISCLOSURE : A metal-oxide-semiconductor field-effect device for constituting a single logic inverter stage. It includes a multidrain transistor operating in enhancement mode and a load transistor, both of monochannel metal-oxide-semiconductor structure. The inverter transistor comprises a single gate region and several drain regions. The single gate region and the single channel region of the inverter multidrain transistor are superimposed on both implantation planes separated by a thin insulating layer, entirely surround each drain region of the inverter multidrain transistor and are entirely surrounded by the single source region of the inverter multidrain transistor.

317435

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