Multidrain metal-oxide-semiconductor field-effects devices

Details Multidrain metal-oxide-semiconductor field-effects devices Multidrain metal-oxide-semiconductor field-effects devices

H - Electricity

01

L

356/123

H01L 29/80 (2006.01) H01L 27/02 (2006.01) H01L 27/088 (2006.01) H01L 29/08 (2006.01) H01L 29/94 (2006.01) H03K 19/094 (2006.01) H03K 19/0944 (2006.01)

Patent

CA 1142269

ABSTRACT OF THE DISCLOSURE: A metal-oxide-semiconductor field-effect device for constituting a single logic inverter stage. It includes a multidrain transistor of mono-channel metal-oxide-semi- conductor structure and a load element connected to the gate of the inverter transistor. The inverter transistor comprises a single gate region and several drain regions. The single gate region and the single channel region of the inverter multidrain transistor are superimposed on both implantation planes separated by a thin insulating layer, surround drain regions of the inverter transistor and are entirely surrounded by the single source region of the inverter transistor. For reducing the implantation surface of the device, at least an insulating region lies between two neighbouring drain regions and/or the load element is a resistive region having a high ohmic value.

352289

Affiliated with

Also associated with

Rating

Multidrain metal-oxide-semiconductor field-effects devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multidrain metal-oxide-semiconductor field-effects devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multidrain metal-oxide-semiconductor field-effects devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1111884