Multijunction semiconductor device

Details Multijunction semiconductor device Multijunction semiconductor device

H - Electricity

01

L

356/178

H01L 29/06 (2006.01) H01L 25/07 (2006.01) H01L 29/868 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1252229

Abstruct of the Disclosure A heat-resistant multijunction semiconductor device comprising a p-layer, a n-layer and a diffusion- blocking layer, the diffusion-blocking layer being provided between the p-layer and the n-layer. The semi- conductor device can reduce the fall-clown of quality which is caused by the diffusion of dopant atoms in the p- layer and n-layer, respectively, into the other layer.

491769

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