Multilayer contact structure

Details Multilayer contact structure Multilayer contact structure

H - Electricity

01

L

356/184

H01L 23/48 (2006.01) H01L 21/285 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1275332

Abstract of the Disclosure MULTILAYER CONTACT STRUCTURE A method for forming a contact structure on a silicon surface comprises forming a TiSi2 layer in intimate contact with the silicon surface and a TiNxOy layer overlying the TiSi2 layer, and forming an Al alloy layer on the TiNxOy layer. The TiSi2 layer provides a good electrical contact to the silicon surface, the Al alloy layer reduces the contact resistance, and the TiNxOy layer provides a diffusion barrier to prevent interaction of the Al alloy and TiSi2 which could degrade the contact. -i-

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