C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
C23C 16/26 (2006.01) C23C 16/06 (2006.01) C23C 16/22 (2006.01) C23C 16/27 (2006.01) C23C 16/30 (2006.01) C23C 28/00 (2006.01)
Patent
CA 2089288
GEMAT 7 (60-SD-528) Abstract of the Disclosure Multilayer CVD diamond films are provided, wherein grain boundaries of the diamond layers are interrupted by renucleating and growing diamond on new nucleation sites comprised of metal. These nucleation sites are positioned on the interface between diamond layers. Methods for producing these multilayer CVD diamond films are also provided wherein the diamond growth on a substrate is interrupted by the deposition of metals which provide new nucleation sites. Diamond growth is then reinitiated.
Company General Electric
Craig Wilson And Company
LandOfFree
Multilayer cvd diamond films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayer cvd diamond films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer cvd diamond films will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1622327