Multilayer cvd diamond films

C - Chemistry – Metallurgy – 23 – C

Patent

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Details

C23C 16/26 (2006.01) C23C 16/06 (2006.01) C23C 16/22 (2006.01) C23C 16/27 (2006.01) C23C 16/30 (2006.01) C23C 28/00 (2006.01)

Patent

CA 2089288

GEMAT 7 (60-SD-528) Abstract of the Disclosure Multilayer CVD diamond films are provided, wherein grain boundaries of the diamond layers are interrupted by renucleating and growing diamond on new nucleation sites comprised of metal. These nucleation sites are positioned on the interface between diamond layers. Methods for producing these multilayer CVD diamond films are also provided wherein the diamond growth on a substrate is interrupted by the deposition of metals which provide new nucleation sites. Diamond growth is then reinitiated.

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