G - Physics – 11 – B
Patent
G - Physics
11
B
G11B 5/39 (2006.01) G01D 5/16 (2006.01) G01N 27/72 (2006.01) G01R 33/09 (2006.01) G11B 5/00 (2006.01) H01L 43/10 (2006.01)
Patent
CA 2134711
A magnetoresistive read sensor incorporates a multilayer sensing element formed of one or more magnetoresistive elements in a planar array, each magnetoresistive element having a multilayer structure of at least two ferromagnetic layers separated by a nonmagnetic layer. The ferromagnetic layers are coupled antiferromagnetically by magnetostatic coupling at opposing edges of the ferromagnetic layers. A bias layer separated from the magnetoresistive sensing element by a spacer layer provides a magnetic field to bias the magnetoresistivesensing element at a desired non-signal point for linear response. The magnetoresistive sensing element is formed by alternatively depositing layers offerromagnetic material and layers of nonmagnetic material on a substrate and then patterning the resulting structure using photolithographic techniques to provide a planar array of magnetoresistive elements. A conductive layer is deposited over the array filling in the spaces separating the magnetoresistive elements to provide electrical conductivity between the elements in the plane of the structure.
Coffey Kevin Robert
Fontana Robert Edward
Howard James Kent
Hylton Todd Lanier
Parker Michael Andrew
International Business Machines Corporation
Saunders Raymond H.
LandOfFree
Multilayer magnetoresistive sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayer magnetoresistive sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer magnetoresistive sensor will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1886382