Multilayer metallization method for integrated circuits

Details Multilayer metallization method for integrated circuits Multilayer metallization method for integrated circuits

H - Electricity

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356/136

H01L 21/28 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 1282188

ABSTRACT OF THE DISCLOSURE Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper-layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging. 0363I

564675

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