Multilayer ohmic contact for p-type semiconductor and method...

Details Multilayer ohmic contact for p-type semiconductor and method... Multilayer ohmic contact for p-type semiconductor and method...

H - Electricity

01

L

356/186

H01L 23/48 (2006.01) H01L 21/443 (2006.01) H01L 21/445 (2006.01) H01L 29/45 (2006.01)

Patent

CA 1236224

ABSTRACT MULTILAYER OHMIC CONTACT FOR P-TYPE SEMICONDUCTOR AND METHOD OF MAKING SAME Novel ohmic contacts are provided for p-type semiconductor compounds comprising at least one of the metals of Class IIB of the Periodic Table of Elements and one of the non-metal elements of Class VIA of the Periodic Table of Elements, as well as a method for forming such novel ohmic contacts. These ohmic contacts comprise d multilayer metal contact wherein the first layer provides a lasting stable contact with the p-type semiconductor; the additional layers provide the necessary electrical conductivity for the contact to be efficient.

497874

Affiliated with

Also associated with

Rating

Multilayer ohmic contact for p-type semiconductor and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multilayer ohmic contact for p-type semiconductor and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer ohmic contact for p-type semiconductor and method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1217239