Multilayer photoconductive assembly with intermediate...

Details Multilayer photoconductive assembly with intermediate... Multilayer photoconductive assembly with intermediate...

G - Physics

03

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96/187

G03G 5/08 (2006.01) G03G 5/043 (2006.01) G03G 5/082 (2006.01)

Patent

CA 1176904

Abstract of the Disclosure A multilayer photoconductive assembly with an intermediate heterojunction. The assembly comprises a conductive substrate, a thin semiconductive layer formed of a material of one carrier polarity, which material has a narrow band gap. This layer is in substantially ohmic (low-resistive) contact with the conductive substrate. A light-absorbing layer is formed of a semiconductor which is thicker than the first layer and is of a carrier polarity opposite to the polarity of the first layer. The material has a band gap wider than the band gap of the first layer. The first and second semiconductive layers form a rectifying heterojunction therebetween. This enables the assembly to have a tremendously increased dark resistance and produces an assembly enabling high-speed electrophotography.

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