Multilayered intermetallic connection for semiconductor devices

Details Multilayered intermetallic connection for semiconductor devices Multilayered intermetallic connection for semiconductor devices

H - Electricity

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356/137

H01L 23/532 (2006.01) B60R 9/00 (2006.01) B60R 13/01 (2006.01) H01L 21/48 (2006.01) H01L 23/498 (2006.01) H05K 1/09 (2006.01) H05K 3/16 (2006.01) H05K 3/38 (2006.01)

Patent

CA 2009247

ABSTRACT A sputtered low copper concentration multilayered, device interconnect metallurgy structure is disclosed herein. The interconnect metallization structure comprises a sputtered aluminum-copper (< 2) weight percent copper conductor. In the preferred embodiment, the AlCu conductor has formed on one or both of its surfaces a layer of an intermetallic compound formed from a Group IVA metal and aluminum. The Group IVA metal is deposited by sputtering. Optionally, onto said top intermetallic layer is further deposited a non-reflective, non-corrosive, etch-stop, capping layer.

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