Multiple chamber deposition and isolation system and method

Details Multiple chamber deposition and isolation system and method Multiple chamber deposition and isolation system and method

C - Chemistry, Metallurgy

23

C

117/125, 32/23,

C23C 14/26 (2006.01) C23C 10/00 (2006.01) C23C 16/54 (2006.01)

Patent

CA 1186280

ABSTRACT OF THE DISCLOSURE The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi- layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in com- position from the first and third layers which are of oppo- site conductivity type by the absence of at least one ele- ment. The second chamber is provided with starting mate- rials including at least one gas from which the deposited layers are derived and the first and third chambers are provided with respective dopants to render the first and third layers opposite in conductivity. Contamination of the second chamber by the dopants in the first and third cham- bers is prevented by the establishment of unidirectional flow of the at least one gas from the second chamber to the first and third chambers.

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