Multiple-gated light-fired thyristor with non-critical light...

Details Multiple-gated light-fired thyristor with non-critical light... Multiple-gated light-fired thyristor with non-critical light...

H - Electricity

01

L

328/114, 356/161

H01L 31/16 (2006.01) G02B 6/42 (2006.01) H01L 29/74 (2006.01) H01L 31/111 (2006.01)

Patent

CA 1131799

RD-10275 ABSTRACT OF THE DISCLOSURE A radiation responsive thyristor device is provided with a relatively large radiation receiving region in which numerous interconnected emitter shorts are provided. A metalization pattern overlies the radiation receiving region. Openings in the metalization pattern admit incident radiation to the underlying semiconductor surface. The metalization pattern connects with an adjacent contact which may be either a main emitter electrode or an amplifying stage gate electrode. Light fibers carrying radiation of sufficient intensity to fire the thyristor are coupled at non-specific locations adjacent the radiation receiving region. At least some of the light fibers will supply incident radiation to the thyristor through the opening in the metalization pattern, producing substantially simultaneous thyristor turn-on at a plurality of separate locations.

331312

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