Multiple narrow-line-channel fet having improved noise...

Details Multiple narrow-line-channel fet having improved noise... Multiple narrow-line-channel fet having improved noise...

H - Electricity

01

L

H01L 29/812 (2006.01) H01L 23/66 (2006.01) H01L 29/10 (2006.01) H01L 29/775 (2006.01)

Patent

CA 2080080

Insulating layers are formed, for instance, by ion injection, in a multilayer of compound semiconductor layers in regions spaced at predetermined intervals, to leave a plurality of narrow channel layers between the insulating layers. A gate electrode is formed on the insulating layers and channel layers so as to traverse those layers.

es couches isolantes sont formées, par exemple par injection ionique, dans des régions à intervalles prédéterminés dans un corps à couches de semi-conducteur multiples, de façon à produire plusieurs couches à canaux étroits entre les couches isolantes. Une gâchette est formée sur les couches isolantes et les couches à canaux étroits de façon à traverser ces couches.

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