Multiple quantum well type semiconductor laser

Details Multiple quantum well type semiconductor laser Multiple quantum well type semiconductor laser

H - Electricity

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H01S 5/34 (2006.01) H01S 5/227 (2006.01) H01S 5/30 (2006.01)

Patent

CA 1279394

Abstract: In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. If the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is made n-conductivity type while that of the barrier layer close to the n-type cladding layer is made p-conductivity type. The invention provides a laser with increased speed of direct modulation.

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