Multiplication mode bistable field effect transistor and...

Details Multiplication mode bistable field effect transistor and... Multiplication mode bistable field effect transistor and...

G - Physics

11

C

352/82.1, 352/82

G11C 11/38 (2006.01)

Patent

CA 1079851

ABSTRACT A novel solid state device which exhibits two-terminal negative resis- tance characteristics. The negative resistance characteristic may be readily shaped by external bias control, providing a wide range of oscillatory or bistable properties. The negative resistance characteristic is obtained by a novel means of device operation exploiting an electron hole pair multi- p.ication effect which is enhanced by high substrate doping in conjunction with appropriate biasing of the junctions within the device. The device exhibits a bias voltage controlled small signal negative resistance region, i.e., the device has a unique feature, a negative slope over an adjustable portion of its V-I characteristic. Bistable action is obtained with a single device. In the first stable state ("off") of the device, power dissipation is zero. In the second stable state ("on") of the device, power dissipation is adjustable to less than one micro-watt.

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