Mutations of voltage-gated potassium channels

C - Chemistry – Metallurgy – 12 – Q

Patent

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C12Q 1/02 (2006.01) C07H 21/04 (2006.01) C07K 14/39 (2006.01) C07K 14/705 (2006.01) C12N 1/15 (2006.01) C12N 1/16 (2006.01)

Patent

CA 2492275

The subject invention includes mutant voltage-gated ion channels that are open over a wide range of potential differences across membranes. The present invention also includes methods of use of such mutant voltage-gated ion channels in cells with highly negative potential differences across their membranes. One preferred mutant voltage-gated ion channel is a channel with a mutation at the residue homologous to P513 in Kv1.5 and at least one mutation at one of the residues homologous to R400, R403, and R409 in Kv1.5.

L'invention concerne des canaux ioniques mutants dépendant du potentiel qui sont ouverts sur une vaste plage de différences de potentiel au travers de membranes. L'invention concerne également des méthodes d'utilisation de tels canaux ioniques mutants dépendant du potentiel dans des cellules présentant des différences de potentiel négatif importantes au travers de leurs membranes. On préfère un canal ionique mutant dépendant du potentiel un canal avec mutation au niveau du résidu homologue de P513 dans Kv1.5 et au moins une mutation au niveau de l'un des résidus homologues de R400, R403, et R409 dans Kv1.5.

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