N-conductivity silicon mono-crystals produced by neutron...

Details N-conductivity silicon mono-crystals produced by neutron... N-conductivity silicon mono-crystals produced by neutron...

C - Chemistry, Metallurgy

30

B

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C30B 31/00 (2006.01) C30B 13/00 (2006.01) C30B 31/20 (2006.01) C30B 31/22 (2006.01) H01L 21/261 (2006.01)

Patent

CA 1045523

A B S T R A C T A method for producing homogeneously doped silicon monocrystals, with n-conductivity, by neutron irradiation, wherein, after zone-melting in a vacuum and conversion of the polycrystalline rod into the monocrystalline form, the remaining conductivity of the rod is determined , the said rod being then exposed to controlled irradiation with thermal neutrons, based on the conductivity measurement carried out, for the purpose of obtaining the desired n-conductivity.

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