N-conductivity silicon monocrystals produced by neutron...

Details N-conductivity silicon monocrystals produced by neutron... N-conductivity silicon monocrystals produced by neutron...

C - Chemistry, Metallurgy

30

B

356/147, 148/2.8

C30B 31/00 (2006.01) C30B 31/20 (2006.01) H01L 21/261 (2006.01)

Patent

CA 1100390

A B S T R A C T A method for producing homogeneously doped silicon monocrystals, with n-conductivity and adjustable dopant concentration, by the irradiation of silicon monocrystals with neutrons, starting with a pre-doped p- or n- conducting crystalline material having optional concentration fluctuation both radially and axially.

215114

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