N-polar aluminum gallium nitride/gallium nitride...

Details N-polar aluminum gallium nitride/gallium nitride... N-polar aluminum gallium nitride/gallium nitride...

H - Electricity

01

L

H01L 29/66 (2006.01)

Patent

CA 2622750

A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.

L'invention concerne un nouveau transistor à effet de champ (FET) à enrichissement, tel que les transistors à forte mobilité électronique (HEMT), comportant une surface à polarité N et utilisant des champs de polarisation pour réduire la population d'électrons sous la grille dans l'orientation polaire N et présentant une suppression de dispersion améliorée, et une faible fuite de grille.

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