Nanoscale electronic devices & fabrication methods

B - Operations – Transporting – 82 – B

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

B82B 3/00 (2006.01) H01L 29/76 (2006.01) H01L 49/00 (2006.01)

Patent

CA 2458233

The invention relates to a method of forming a conducting nanowire between two contacts on a substrate surface wherein a plurality of nanoparticles is deposited on the substrate in the region between the contacts, and the single nanowire running substantially between the two contacts is formed by either by monitoring the conduction between the contacts and ceasing deposition at the onset of conduction, and/or modifying the substrate to achieve, or taking advantage of pre-existing topographical features which will cause the nanoparticles to form the nanowire. The resultant conducting nanowires are also claimed as well as devices incorporating such nanowires.

La présente invention se rapporte à un procédé de formation d'un fil conducteur nanométrique entre deux contacts sur une surface de substrat selon lequel une pluralité de nanoparticules sont déposées sur le substrat dans la région entre les contacts, et l'unique fil nanométrique passant sensiblement entre les deux contacts est formé soit par surveillance de la conduction entre les contacts et arrêt de la formation du dépôt dès l'apparition de la conduction, soit par modification du substrat aux fins de l'obtention de caractéristiques topographiques ou utilisation avantageuse de caractéristiques topographiques préexistantes qui assurent la formation du fil nanométrique par les nanoparticules. La présente invention se rapporte également aux fils conducteurs nanométriques résultants ainsi qu'à des dispositifs contenant de tels fils nanométriques.

LandOfFree

Say what you really think

Search LandOfFree.com for Canadian inventors and patents. Rate them and share your experience with other people.

Rating

Nanoscale electronic devices & fabrication methods does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nanoscale electronic devices & fabrication methods, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nanoscale electronic devices & fabrication methods will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFCA-PAI-O-1765406

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.