Narrow band gap photovoltaic devices with enhanced open...

Details Narrow band gap photovoltaic devices with enhanced open... Narrow band gap photovoltaic devices with enhanced open...

H - Electricity

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345/22

H01L 31/04 (2006.01) H01L 31/075 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1206242

ABSTRACT A photovoltaic device having enhanced open circuit voltage includes a pair of oppositely doped layers between which an intrinsic type layer having two regions is disposed. The second intrinsic region has a wider band gap or lower density of defect states in the band gap, respectively, than that of the first intrinsic region. The second intrinsic region is disposed between the first intrinsic region and one of the doped regions and on the opposite side of the first region from the light incident surface of the device.

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