Narrow divergence, single quantum well, separate...

Details Narrow divergence, single quantum well, separate... Narrow divergence, single quantum well, separate...

H - Electricity

01

S

345/32

H01S 5/343 (2006.01)

Patent

CA 2019732

7551 NARROW DIVERGENCE, SINGLE QUANTUM WELL, SEPARATE CONFINEMENT, ALGaAS LASER Abstract of the Disclosure A narrow divergence, single quantum well, separate confinement, AlGaAs laser of the type which includes the following sequentially grown epitaxial layers: (a) an n-AlGaAs cladding layer; (b) an AlGaAs waveguide layer; (c) a GaAs quantum well layer; (d) an AlGaAs waveguide layer; (e) a p-AlGaAs cladding layer; and is improved to provide a far-field angular divergence in the order of thirty degrees (30°), full width at half maximum (FWHM) with a reduced threshold current temperature sensitivity for use in electronic imaging printers.

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