Native growth of semiconductor oxide layers

Details Native growth of semiconductor oxide layers Native growth of semiconductor oxide layers

C - Chemistry, Metallurgy

30

B

148/3.5

C30B 33/00 (2006.01) H01L 21/316 (2006.01)

Patent

CA 1084816

NATIVE GROWTH OF SEMICONDUCTOR OXIDE LAYERS Abstract of the Disclosure An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxids layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate, - i -

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