G - Physics – 05 – F
Patent
G - Physics
05
F
G05F 1/10 (2006.01) H02M 3/07 (2006.01) H02M 3/18 (2006.01)
Patent
CA 2499086
An n-channel MOS transistor negative-voltage charge pump is disclosed in which the bulks of the n-channel MOS transistors (26, 28) are biased in such a manner as to prevent turning on the parasitic bipolar transistor inherent in the CMOS environment of the charge pump structure.
L'invention concerne une pompe de maintien à tension négative pour transistor MOS à n-canaux, dans laquelle la majorité des transistors MOS à n-canaux sont polarisés, de façon à empêcher le retournement d'un transistor bipolaire parasite, qui est inhérent à l'environnement des CMOS de la structure de pompe de maintien.
Caser Fabio Tassan
Figini Luca
Frulio Massimiliano
Oddone Giorgio
Atmel Corporation
Smart & Biggar
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