Negative resistance device using complementary fet's

Details Negative resistance device using complementary fet's Negative resistance device using complementary fet's

G - Physics

11

C

356/115, 352/82.

G11C 11/40 (2006.01) G11C 11/36 (2006.01) G11C 14/00 (2006.01) H01L 27/06 (2006.01) H01L 27/092 (2006.01) H03K 3/353 (2006.01) H03K 3/3565 (2006.01)

Patent

CA 1077622

Abstract of the Disclosure A negative resistance device is formed by a series-connection of a complementary pair of insulated gate type FETs (field effect transistors), the sources of the FETs being connected to each other and the gate of each FET being connected to the drain of the other FET. At least one of the FETs has a double layered gate insulating film under the gate electrode, thereby forming a non-volatile memory element. The device acquires or loses a negative resistance character- istic by responding to signals on the gates, thereby memorizing the signals. A highly efficient memory which requires little power during writing-in, erasing and memory-holding, can be achieved in this way.

246101

Affiliated with

Also associated with

Rating

Negative resistance device using complementary fet's does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Negative resistance device using complementary fet's, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Negative resistance device using complementary fet's will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-299306