Negative resistance diode and process for making same

Details Negative resistance diode and process for making same Negative resistance diode and process for making same

H - Electricity

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356/115

H01L 21/30 (2006.01) H01L 29/864 (2006.01) H01L 29/868 (2006.01)

Patent

CA 1061473

NEGATIVE RESISTANCE DIODE AND PROCESS FOR MAKING SAME Abstract of the Disclosure A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first grown upon a doped semiconductor substrate using epitaxial vapor deposition growth techniques employing a furnace tube within a multiple temperature zone reaction furnace. The doping spike is produced by injecting under pressure a fixed predetermined volume of dopant into the furnace tube. An avalanche region is grown over the doping spike and a Schottky barrier contact or semiconducting material of the opposite conductivity type grown over the avalanche region. Avalanche regions having a length less than 15% of the total active length of the device and doping spikes having a width of 500.ANG. or less are disclosed in a high-efficiency device.

257050

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