C - Chemistry – Metallurgy – 23 – C
Patent
C - Chemistry, Metallurgy
23
C
117/78
C23C 3/00 (1980.01)
Patent
CA 1178137
ABSTRACT OF THE DISCLOSURE: A simple method for plating nickel onto silicon which renders unnecessary any catalyzing pretreatment of the silicon surface which is to receive the nickel. The method comprises the immersion of a silicon substrate in a suitable nickel bath in order that nickel ions in the bath will be reduced to solid nickel and deposited onto the substrate so as to form an adhering layer thereon. The method is especially advantageous in plating nickel onto silicon shallow junction devices for the purpose of providing ohmic contacts. MTA-33
388343
Gonsiorawski Ronald
Patel Kirit B.
Macrae & Co.
Mobil Solar Energy Corporation
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