Nitric oxide (no) detector

G - Physics – 01 – N

Patent

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G01N 27/24 (2006.01) G01N 33/00 (2006.01)

Patent

CA 2434516

A semiconductor device (Figure 1) is provided for the detection of nitric oxide (NO) molecules in gaseous mixtures, in biological fluids and in aqueous solutions. The device is a molecular controlled semiconductor resistor (MOCSER) of a multilayered GaAs structure to which top layer a layer of multifunctional NO-binding molecules are adsorbed. The sensitivity of the semiconductor device towards NO is independent of mixture composition. Nitric oxide concentrations of as low as 10 ppb NO were detected in mixtures containing various contaminants.

L'invention concerne un dispositif à semiconducteurs permettant de détecter des molécules d'oxyde nitrique (NO) dans des mélanges gazeux, dans des fluides biologiques et dans des solutions aqueuses. Ce dispositif est une résistance semiconductrice à contrôle moléculaire (MOCSER) constituée d'une structure GaAs multicouche, une couche de molécules multifonctionnelles liant le NO étant adsorbées à la couche supérieure de cette structure. La sensibilité du dispositif à semiconducteurs par rapport au NO ne dépend pas de la composition du mélange. Des concentrations d'oxyde nitrique d'à peine 10 ppb NO ont été détectées dans des mélanges contenant divers contaminants.

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