H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/778 (2006.01) H01L 29/24 (2006.01) H01L 29/267 (2006.01) H01L 29/45 (2006.01) H01L 29/20 (2006.01)
Patent
CA 2334823
A high electron mobility transistor (HEMT) (10) is disclosed that includes a semi-insulating silicon carbide substrate (11), an aluminum nitride buffer layer (12) on the substrate, an insulating gallium nitride layer (13) on the buffer layer, an active structure of aluminum gallium nitride (14) on the gallium nitride layer, a passivation layer (23) on the aluminum gallium nitride active structure, and respective source, drain and gate contacts (21, 22, 23) to the aluminum gallium nitride active structure.
L'invention concerne un transistor à haute mobilité d'électrons (HEMT) (10) comprenant un substrat semi-isolant en carbure de silicium (11), une couche tampon de nitrure d'aluminium (12) sur le substrat, une couche isolante de nitrure de gallium (13) sur la couche tampon, une structure active de nitrure de gallium-aluminium (14) sur la couche de nitrure de gallium, une couche de passivation (23) sur la structure active de nitrure de gallium et d'aluminium, et des contacts respectifs de source, drain et grille (20, 21, 22) établissant le contact avec la structure active de nitrure de gallium-aluminium.
Allen Scott Thomas
Palmour John Williams
Sheppard Scott Thomas
Cree Inc.
Cree Research Inc.
Sim & Mcburney
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