Nitride heterojunction transistors having charge-transfer...

Details Nitride heterojunction transistors having charge-transfer... Nitride heterojunction transistors having charge-transfer...

H - Electricity

01

L

H01L 29/778 (2006.01) H01L 21/335 (2006.01) H01L 29/20 (2006.01)

Patent

CA 2554942

A nitride-based field effect transistor includes a substrate, a channel layer comprising InAlGaN formed on the substrate, source and drain ohmic contacts in electrical communication with the channel layer, and a gate contact formed on the channel layer. At least one energy barrier opposes movement of carriers away from the channel layer. The energy barrier may comprise an electron source layer in proximity with a hole source layer which generate an associated electric field directed away from the channel. An energy barrier according to some embodiments may provide a built-in potential barrier in excess of about 0.5 eV. Method embodiments are also disclosed.

La présente invention a trait un transistor à effet de champ à base de nitrure comportant un substrat, une couche de canal comprenant de l'InAlGaN formé sur le substrat, des contacts ohmiques de source et de drain en communication électrique avec la couche de canal, et un contact de grille formé sur la couche de canal. Au moins une barrière d'énergie s'oppose au déplacement des porteurs de charge en éloignement de la couche de canal. La barrière d'énergie peut comporter une couche de source d'électrons à proximité d'une couche de source de trous générant un champ électrique associé orienté en éloignement du canal. Une barrière d'énergie selon certains modes de réalisation peuvent fournir une barrière de potentiel intégrée dépassant environ 0,5 eV. L'invention a également trait à des modes de réalisation de procédés de fabrication d'un tel transistor.

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