Nitride nanowires and method of producing such

Details Nitride nanowires and method of producing such Nitride nanowires and method of producing such

H - Electricity

01

L

H01L 21/20 (2006.01) B82B 1/00 (2006.01) B82B 3/00 (2006.01) C30B 25/00 (2006.01) H01L 29/06 (2006.01)

Patent

CA 2674448

The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.

La présente invention porte sur la croissance de semi-conducteurs de nitrure applicable à une multitude de dispositifs semi-conducteurs tels que des diodes, DEL et transistors. Selon le procédé de l'invention, des nanofils semi-conducteurs de nitrure sont développés à l'aide d'une technique de croissance de zone sélective sur la base du procédé de dépôt chimique en phase vapeur (CVD). Une source d'azote et une source organométallique sont présentes pendant l'étape de croissance de nanofils et au moins le débit de source d'azote est continu pendant l'étape de croissance de nanofils. Le rapport V/III utilisé dans le procédé de l'invention est significativement inférieur aux rapports V/III couramment associés à la croissance d'un semi-conducteur à base de nitrure.

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