Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

H - Electricity

01

L

H01L 29/66 (2006.01) H01L 33/04 (2010.01) H01L 31/0304 (2006.01) H01S 5/343 (2006.01)

Patent

CA 2696270

An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGal-xN (0 < x < 1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5 x 10 16 to 2 x 10 18 /cm3.

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