Nitride semiconductor device

Details Nitride semiconductor device Nitride semiconductor device

H - Electricity

01

L

H01L 29/20 (2006.01) H01L 31/0304 (2006.01) H01S 5/30 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2529996

A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lower, resulting in realization of more efficient devices.

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