H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 33/02 (2010.01) H01L 33/04 (2010.01) H01L 33/06 (2010.01)
Patent
CA 2599881
A nitride semiconductor light emitting diode according to the present invention, includes: a substrate; a buffer layer formed on the substrate; an In-doped GaN layer formed on the buffer layer; a first electrode layer formed on the In-doped GaN layer; an InxGai-xN layer formed on the first electrode layer; an active layer formed on the InxGai-xN layer; a first P-GaN layer formed on the active layer; a second electrode layer formed on the first P-GaN layer; a second P-GaN layer partially protruded on the second electrode layer; and a third electrode formed on the second P-GaN layer.
La présente invention concerne une diode électroluminescente à semi-conducteur nitruré composée comme suit: substrat; couche tampon formée sur le substrat; couche GaN dopée In formée sur la couche tampon; première couche électrode formée sur la couche GaN dopée In; couche InxGai-xN formée sur la première couche électrode; couche active formée sur l couche InxGai-xN; première couche P-GaN formée sur la couche active; seconde couche électrode formée sur la première couche P-GaN; seconde couche P-GaN dépassant partiellement de la seconde couche électrode; et troisième couche électrode formée sur la seconde couche P-GaN.
Lg Innotek Co. Ltd.
Oyen Wiggs Green & Mutala Llp
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