Nitrogen sources for molecular beam epitaxy

Details Nitrogen sources for molecular beam epitaxy Nitrogen sources for molecular beam epitaxy

C - Chemistry, Metallurgy

30

B

C30B 23/02 (2006.01) C30B 29/40 (2006.01) H01L 21/203 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2497266

MBE nitrogen sources of dimethylhydrazine, tertiarybutlyhydrazine, nitrogentrifloride, and NHx radicals. Those nitrogen sources are beneficial in forming nitrogen-containing materials on crystalline substrates using MBE. Semiconductor lasers in general, and VCSEL in particular, that have nitrogen- containing layers can be formed using such nitrogen sources.

L'invention concerne des sources d'azote pour épitaxie par jets moléculaires, à base de diméthylhydrazine, de tert-butylhydrazine, de trifluorure d'azote et de radicaux NHx. Ces sources d'azote permettent de former des matières azotées sur des substrats cristallins par épitaxie par jets moléculaires. Ces sources d'azote permettent de former des lasers à semi-conducteur en général, et notamment des VCSEL, qui comportent des couches azotées.

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