Nmos amplifier using unimplanted transistors

Details Nmos amplifier using unimplanted transistors Nmos amplifier using unimplanted transistors

H - Electricity

03

F

330/20, 356/74

H03F 3/16 (2006.01) H01L 29/76 (2006.01) H03F 3/45 (2006.01)

Patent

CA 1161965

Abstract: The present invention relates to a low noise MOS amplifier. The amplifier is comprised of an unimplanted field effect input transistor which has a zero voltage threshold, the gate terminal thereof being connected to receive an input signal. A depletion mode load device having a first terminal is connected to a first of the drain and source terminals of the unimplanted input transistor. A current source is connected in series with the second terminal of the load device and a second of the drain and source terminals of the input transistor. An output terminal is connected to the junction of the unimplanted input transistor and the load device for providing an output signal from the amplifier. The unimplanted field effect input transistor substantially eliminates the generation of low frequency noise in the operation of the MOS amplifier.

368126

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