Non-destructive read-out of a signal from a ccd shift register

Details Non-destructive read-out of a signal from a ccd shift register Non-destructive read-out of a signal from a ccd shift register

G - Physics

11

C

352/82.24

G11C 11/34 (2006.01) G11C 19/28 (2006.01) G11C 27/04 (2006.01) H01L 29/768 (2006.01) H01L 29/86 (2006.01)

Patent

CA 1152647

ABSTRACT A diffusion area held freely floating (floating diffusion) is arranged in a CCD shift register in the area of the weakening zone under- neath the electrode of a MIS capacitor. The diffusion area is doped in opposition to the semiconductor substrate and is only contacted with the control gate of a read-out transistor. The electrode is held at constant voltage and the diffusion area is charged when the signal charge flows in and the voltage of the diffusion area is raised to the surface potential of the capacitor. The voltage rise is smaller in correspondence with the charge received than in a non-charged state. The decrease of the voltage rise is utilized as a read-out signal by a read-out transistor. During actuation of the adjacent capacitor, the charge flows into the capacitor and the floating diffusion area is reset without destroying the signal charge and without a reset impulse.

327475

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