G - Physics – 02 – F
Patent
G - Physics
02
F
G02F 1/35 (2006.01) G02F 1/355 (2006.01) G02F 2/02 (2006.01)
Patent
CA 2279806
A non-linear optical silica thin film whose main material is SiO2-GeO2 is formed by irradiating with positive or negative polar particles such that polarization orientation is carried out in the silica thin film. A silica thin film is deposited on a substrate. At stages during deposition the silica thin film is irradiated with positive particles, neutral particles or non-irradiation of particles, and negative particles, thereby forming a plurality of regions having different states of polarization orientation that are in a direction of film thickness of the silica thin film. Thus, without carrying out a post process of polarization orientation, such as an application of voltage, a polarization orientation process is completed with formation of the silica thin film.
Hasegawa Hiroshi
Komeda Osamu
Borden Ladner Gervais Llp
Toyota Jidosha Kabushiki Kaisha
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