Non-rectifying contacts to iii-v semiconductors

H - Electricity – 01 – L

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356/186

H01L 21/285 (2006.01) H01L 29/40 (2006.01) H01L 29/45 (2006.01) H01L 33/00 (2006.01)

Patent

CA 1310433

- 26 - Abstract of the Disclosure A new technique for forming non-rectifying electrical contacts to III-V semiconductor materials, without the use of dopants or of an alloying procedure, is disclosed. In accordance with this technique, an electrical contact is formed simply by depositing a region of material (onto the semiconductor material) having a composition which includes at least one metal element and at least one of three specific Group V elements, i.e., P, As, or Sb, and having a bulk electrical resistivity equal to or less than about 250 µ.OMEGA.-cm. Alternatively, a contact is formed by depositing nickel, or a nickel-containing material essentially free of gold and silver, and having a composition which does not include any of the three Group V elements. The nickel, or nickel-containing material, is then reacted with the substrate to form a compound having a composition which includes nickel as well as one of the three Group V elements.

540407

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