Non-volatile electronic memory

Details Non-volatile electronic memory Non-volatile electronic memory

G - Physics

11

C

352/82, 352/40.9

G11C 17/00 (2006.01) G11C 11/22 (2006.01) G11C 14/00 (2006.01) H01L 27/115 (2006.01)

Patent

CA 1276723

A Non-Volatile Electronic Memory A b s t r a c t A volatile semiconductor memory module (RAM) is combined with a permanent memory based on an electri- cally polarisable, preferably ferroelectric, layer within an integrated monolithic module in such a manner that, as a result of a STORE command, the information present in the semiconductor memory is permanently stored by polarisation of selected regions of the electrically polarisable layer. In the same way the permanently stored information can be read out again as a result of a RECALL command and returned to the semi- conductor memory. Preferably, a ferroelectrically pola- risable layer 11 is applied to the semiconductor memory, which layer, in the came way as the semiconductor memory, is provided on its upper side and underside with word and bit lines in the form of strip electrodes 9,12. The strip electrode system 9 on the underside of the ferroelectric layer 11 simultaneously forms the word or bit line system of the semiconductor memory facing the surface. In this manner each semiconductor memory cell 7 is clearly allocated a non-volatile ferroelectric memory cell 13.

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