Non-volatile information storage arrays of cryogenic pin diodes

Details Non-volatile information storage arrays of cryogenic pin diodes Non-volatile information storage arrays of cryogenic pin diodes

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G11C 11/40 (2006.01) G11C 11/44 (2006.01) G11C 11/56 (2006.01) G11C 13/04 (2006.01) G11C 17/06 (2006.01) G11C 17/16 (2006.01)

Patent

CA 1122708

SEMICONDUCTOR DEVICES HAVING NON-VOLATILE INFORMATION STORAGE CHARACTERISTICS, AND ARRAYS THEREOF ABSTRACT OF THE DISCLOSURE A semiconductor memory device exhibiting non-volatile storage characteristics is disclosed. The device comprises a storage element, maintained in a prescribed range of temperatures, which exhibits an effect of charge storage and release of the stored charge upon application of a suitable bias voltage. Information is stored by exposure to light or by applying a suitable bias voltage to put the device into one of a multiplicity of long-lived states. In the case of exposure to light, the state of the device is indicative of the integrated photon flux. Information can be stored or read out in times as short as 1 nanosecond or less and will remain stored for as long as 105 seconds or longer without any sustaining voltage. A plurality of the memory devices can be interconnected in an array and can be used as a memory storage bank.

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