Non-volatile memory

Details Non-volatile memory Non-volatile memory

G - Physics

11

C

352/82

G11C 11/412 (2006.01) G11C 16/04 (2006.01) G11C 16/12 (2006.01)

Patent

CA 2008406

ABSTRACT OF THE DISCLOSURE A non-volatile memory provides a signal hold circuit which uses a FAMOS instead of an input transistor of a ratiod inverting amplifier and outputs a change in a threshold value of the FAMOS, for the purpose of reducing the number of elements of the signal hold circuit. FAMOSs for programming and latching are provided respectively, and the FAMOSs are interconnected to each other at their floating gate electrodes to isolate the signal hold circuit and a program circuit and hence prevent a DC current path from being formed between those two circuits, for the purpose of miniaturization of a memory cell.

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