Non-volatile memory circuit using ferroelectric capacitor...

Details Non-volatile memory circuit using ferroelectric capacitor... Non-volatile memory circuit using ferroelectric capacitor...

G - Physics

11

C

352/5

G11C 11/22 (2006.01) G11C 11/56 (2006.01) G11C 17/04 (2006.01)

Patent

CA 1340340

A non-volatile memory cell and related system utilize ferroelectric capacitors as data storage elements. Circuitry is provided for writing to a single ferroelectric capacitor storage element, as well as to dual storage elements operating inversely. The storage elements are read by use of a sense amplifier in a configuration which automatically restores the original data states, thereby eliminating the need for a subsequent restore operation. Memory systems are described which include circuitry for driving bit lines, word lines and drive lines to accomplish both the write and read operations.

568103

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