Non-volatile memory device

G - Physics – 11 – C

Patent

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Details

G11C 11/22 (2006.01) C08L 27/16 (2006.01) H01L 27/28 (2006.01)

Patent

CA 2459319

In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer.

La présente invention concerne un dispositif de mémoire non volatile (10) qui comprend un matériau de mémoire diélectrique électriquement polarisable (11) aux propriétés ferroélectriques ou d'électret et capable d'hystérèse et de rémanence, lequel matériau de mémoire (11) comprend un ou plusieurs polymères, l'un de ces polymères au moins étant un polymère deutéré.

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