G - Physics – 11 – C
Patent
G - Physics
11
C
G11C 11/22 (2006.01) C08L 27/16 (2006.01) H01L 27/28 (2006.01)
Patent
CA 2459319
In a non-volatile memory device (10) comprising an electrically polarizable dielectric memory material (11) with ferroelectric or electret properties and capable of exhibiting hysteresis and remanence, wherein the memory material (11) comprises one or more polymers, at least one of these polymers is a deuterated polymer.
La présente invention concerne un dispositif de mémoire non volatile (10) qui comprend un matériau de mémoire diélectrique électriquement polarisable (11) aux propriétés ferroélectriques ou d'électret et capable d'hystérèse et de rémanence, lequel matériau de mémoire (11) comprend un ou plusieurs polymères, l'un de ces polymères au moins étant un polymère deutéré.
Gudesen Hans Gude
Nordal Per-Erik
Robic
Thin Film Electronics Asa
LandOfFree
Non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1710587