Non-volatile memory device and method of making the same

Details Non-volatile memory device and method of making the same Non-volatile memory device and method of making the same

G - Physics

11

C

356/199, 352/82.

G11C 11/40 (2006.01) G11C 16/04 (2006.01) H01L 29/78 (2006.01) H01L 29/792 (2006.01)

Patent

CA 1078517

Abstract of the Disclosure The present invention provides a memory device of the MNOS FET type wherein each of the source region and the drain region contain a high concentration part and a low concentration part. A double layered insulation film under the gate electrode extends between the source region and drain region but contacts only the lower concentration parts thereof, so that acceptor impurity is prevented from mixing into the double layered insulation film from the source region and drain region, thus greatly improving the life (number of repeated uses) of the device.

245948

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