Non-volatile memory devices fabricated from graded or...

Details Non-volatile memory devices fabricated from graded or... Non-volatile memory devices fabricated from graded or...

G - Physics

11

C

352/81

G11C 11/40 (2006.01) H01L 29/51 (2006.01) H01L 29/792 (2006.01)

Patent

CA 1133133

NON-VOLATILE MEMORY DEVICES FABRICATED FROM GRADED OR STEPPED ENERGY BAND GAP INSULATOR MIM OR MIS STRUCTURES Abstract of the Invention New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency. Y0978-007

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